中村 恒夫 （ Nakamura Hisao ）

システムID: hnakamura
中村 恒夫 （ナカムラ ヒサオ）
Nakamura Hisao
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所属班A03班　分子機能の設計・計測
研究課題単一分子と組織化分子ネットワークの非線型伝導理論
役割研究分担者
役職主任研究員
所属研究機関独立行政法人産業技術総合研究所
ナノ材料研究部門　　
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専門分野理論化学, 計算物理
研究キーワード第一原理量子伝導計算

Papers List

2017

[13] Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

Hisao Nakamura; Ivan Rungger; Stefano Sanvito; Nobuki Inoue; Junji Tominaga; Yoshihiro Asai
Nanoscale, 9, 9386 - 9395, 2017/6/20
DOI: 10.1039/c7nr03495d

2015

[12] Temperature dependence of the thermopower and its variation of the Au atomic contact

R. Matsushita; S. Kaneko; S. Fujii; H. Nakamura; M. Kiguchi
Nanotechnology, 26, 045709-1 - 045709-6, 2015

[11] Temperature Dependence of the Thermopower and its Variation of the Au Atomic Contact

R. Matsushita; S. Kaneko; S. Fujii; H. Nakamura; M. Kiguchi
Nanotechnology, 26, 4, 045709-1 - 045709-6, 2015/1/30
DOI: 10.1088/0957-4484/26/4/045709

2014

[10] Influence of surface polarity on water dynamics at the water/rutile TiO2(110) interface

T. Ohto; A. Mishra; S. Yoshimune; H. Nakamura; M. Bonn; Y. Nagata
J. Phys. Condens. Matter, 26, 224102-1 - 224102-8, 2014
DOI: 10.1088/0953-8984/26/24/244102

[9] Single Molecular Resistive Switch Obtained via Slding Multiple Anchoring Points and Varying Effective Wire Length

M. Kiguchi; T. Ohto; K. Sugiyasu; S. Nakajima; M. Takeuchi; H. Nakamura
J. Am. Chem. Soc., 136, 7327 - 7332, 2014
DOI: 10.1021/ja413104g

[8] Design of ReRAM Cell Structure by Metal Buffer and Contact Engineering via First-Principles Transport Calculation

Hisao Nakamura; Takehide Miyazaki; Kengo Nishio; Hisashi Shima; Hiroyuki Akinaga; Yoshihiro Asai
Computational Electronics (IWCE), 2014 International Workshop, 1 - 4, 2014
DOI: 10.1109/IWCE.2014.6865829

[7] Non-Equilibrium Transport Theory Applied to Nano Electronics Problems

Yoshihiro Asai; Hisao Nakamura
ECS Transactions, 63, 14, 63 - 69, 2014
DOI: doi:10.1149/06414.0063ecst

[6] Influence of surface polarity on water dynamics at the water/rutile TiO2(110) interface,

T. Ohto; A. Mishra; S. Yoshimune; H. Nakamura; M. Bonn; Y. Nagata
J. Phys: Condens. Matter, 26, 244102-1 - -8, 2014

[5] Single Molecular Resistive Switch Obtained via Slding Multiple Anchoring Points and Varying Effective Wire Length

M. Kiguchi; T. Ohto; K. Sugiyasu; S. Nakajima; M. Takeuchi; H. Nakamura
J. Am. Chem. Soc. , 136, 7327 - 7332, 2014

[4] First-Principles Transport Modeling for Metal/Insulator/Metal Structures

Takehide Miyazaki; Hisao Nakamura; Kengo Nishio; Hisashi Shima; Hiroyuki Akinaga; Yoshihiro Asai
JPS Conf. Proc., 1, 012075-1 - 012075-6, 2014
DOI: 012075, 10.7566/JPSCP.1.012075

2013

[3] First-principles modeling for current-voltage characteristics of resistive random access memories

Takehide Miyazaki; Hisao Nakamura; Kengo Nishio; Hisashi Shima; Hiroyuki Akinaga; Yoshihiro Asai
Proceedings of Materials Research Society, , 2013
DOI: 10.1557/opl.2013.763

[2] First-principles Transport Modeling for Metal/Insulator/Metal Structures,

Takehide Miyazaki; Hisao Nakamura; Kengo Nishio; Hisashi Shima; Hiroyuki Akinaga; Yoshihiro Asai
Proceedings of APPC12, , 2013
DOI: 10.7566/JPSCP.1.012075

[1] Thermoelectric efficiency of organometallic complex wires via quantum resonance effect and long-range electric transport property [重要文献]

Hisao Nakamura; Tatsuhiko Ohto; Takao Ishida; Yoshihiro Asai
J. Am. Chem. Soc. , 135, 16545 - 1652, 2013/11
DOI: 10.1021/ja407662m